Abstract:

By means of ESCA, Si content of wheat straw surface was studied under different temperatures and sputtered by Ar⁺.In the cross section of wheat straw, Si content was the largest in the middle section. As temperature going up, Si content of wheat straw surface was rising after decrease. Of all selected temperatures, Si content was the smallest at 170℃ and 220℃. After surface sputtered by Ar⁺, Si content was rising with the depth from exterior to interior. The chemical surrounding of Si in wheat straw was closed to that of methyl-silicone.

Key words: Wheat straw, ESCA, Si content